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UG(F,B)18DCT

Features: • Glass passivated chip junction• Ultrafast recovery time• Low switching losses, high efficiency• Low forward voltage drop• High forward surge capability• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)• Solder dip...

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UG(F,B)18DCT: Features: • Glass passivated chip junction• Ultrafast recovery time• Low switching losses, high efficiency• Low forward voltage drop• High forward surge capability̶...

UG(F,B)18DCT Data Sheet

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Part Number:
UG(F,B)18DCT
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245  (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB and ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


Application

For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching  pplication.




Specifications

CHARACTERISTICS
SYMBOL
UG18ACT
UG18BCT
UG18CCT
UG18DCT
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
150
200
V
Maximum RMS Voltage
VRMS
35
70
105
140
V
Maximum DC Blocking Voltage
VDC
50
100
150
200
V
Maximum average forward rectified current at TC = 105 °C
IF(AV)
18
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode)
IFSM
175
A
Operating junction and storage temperature range
TJTSTG
- 65 to + 150
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V

 




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