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UGF8GT

Features: ·Plastic package has Underwriters Laboratories Flammability Classification 94V-0·Ideally suited for freewheeling diode power factor correction applications·Soft recovery characteristics·Excellent high temperature switching·Optimized to reduce switching losses·High temperature soldering g...

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SeekIC No. : 004536880 Detail

UGF8GT: Features: ·Plastic package has Underwriters Laboratories Flammability Classification 94V-0·Ideally suited for freewheeling diode power factor correction applications·Soft recovery characteristics·Ex...

UGF8GT Data Sheet

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Part Number:
UGF8GT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Plastic package has Underwriters Laboratories Flammability Classification 94V-0
·Ideally suited for freewheeling diode power factor correction applications
·Soft recovery characteristics
·Excellent high temperature switching
·Optimized to reduce switching losses
·High temperature soldering guaranteed: 250°C, 0.25" (6.35mm) from case for 10 seconds
·Glass passivated chip junction


Specifications

SYMBOLS
UGF8FT
UGF8GT
UNITS
Maximum repetitive peak reverse voltage
VRRM
300
400
Volts
Working peak reverse voltage
VRWM
225
300
Volts
Maximum RMS voltage
VRMS
210
280
Volts
Maximum DC blocking voltage
VDC
300
400
Volts
Maximum average forward rectified current at TC=100°C
I(AV)
8.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
100.0
Amps
Maximum instantaneous forward voltage at IF= 8A (NOTE 1) TJ=25°C
                                            TJ=150°C

VF
1.30
1.00
Volts
Maximum reverse leakage current TJ=25°C
at working peak reverse voltage TJ=100°C
IR
10
350
A
Reverse recovery time at Maximum
IF=1.0A, di/dt=100A/ms, VR=30V, Irr=0.1 IRM
trr
50
ns
Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A
trr
35
ns
Maximum reverse recovery current at
IF=10A, di/dt=50A/ms,VR=30V TC=100°C
IRM
5.5
Amps
Maximum stored charge
IF=2A, di/dt=20A/ms, VR=30V, Irr=0.1 IRM
Qrr
55
nC
Typical thermal resistance from junction to case
RQJC
5.0
°C/W
Operating junction and storage temperature range
TJ, TSTG
-40 to+150
°C



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