UFN520

The UFN520 has 6 features.The first one is compact plastic package.The second one is fast switching.The third one is low drive current.The fourth one is ease of paralleling.The fifth one is no second breakdown.The sixth one is excellent temperature stability.

The unitrode power MOSFET design utilizes the most advanced technology available.This efficient design achieves a very low RDS(ON) and a high transconductance.The unitrode power MOSFET features all of the advantages of MOS technology such as voltage control,freedom from second breakdown,very fast switching speeds,and thermal stability.These power MOSFETS are ideally suited for many high-speed,high-power switching applications such as switching power supplies,motor controls,and wide-band and audio amplifiers.The UFN520 has some absolute maximum ratings.When parameter is VDS,drain-source voltage,the rating is 100,the unit is V.When parameter is VDGR,drain-gate voltage(RGS = 1M),the rating is 100,the unit is V.When parameter is ID @ TC = 25,continous drain current,the rating is 8.0,the unit is A.When parameter is ID @ TC = 100,continous drain current,the rating is 5.0,the unit is A.When parameter is IDM,pulsed drain current,the rating is 32,the unit is A.

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