UF840

Features: `8A, 500V, Low RDS(ON)(0.85)` Single Pulse Avalanche Energy Rated` Rugged - SOA is Power Dissipation Limited` Fast Switching Speeds`Linear Transfer Characteristics` High Input ImpedanceSpecifications Parameter Symbol Rating Unit Drain-Source Voltage(TJ =25~125) VDSS...

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SeekIC No. : 004536662 Detail

UF840: Features: `8A, 500V, Low RDS(ON)(0.85)` Single Pulse Avalanche Energy Rated` Rugged - SOA is Power Dissipation Limited` Fast Switching Speeds`Linear Transfer Characteristics` High Input ImpedanceSpe...

floor Price/Ceiling Price

Part Number:
UF840
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/6

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Product Details

Description



Features:

`8A, 500V, Low RDS(ON)(0.85)
` Single Pulse Avalanche Energy Rated
` Rugged - SOA is Power Dissipation Limited
` Fast Switching Speeds
`Linear Transfer Characteristics
` High Input Impedance



Specifications

Parameter
Symbol
Rating
Unit
Drain-Source Voltage(TJ =25~125)
VDSS
500
V
Gate-Source Voltage(RGS = 20k,TJ =25~125)
VDGR
500
V
Gate to Source Voltage
VGS
±20
V
Drain Current Continuous
ID
8.0
A
A
Tc =100
5.1
A
Pulsed
IDM
32
A
Maximum Power Dissipation(Ta = 25)
Derating above 25
PD
125
W
1.0
W/
Single Pulse Avalanche Energy Rating
(VDD=50V, starting TJ =25, L=14mH, RG=25, peak IAS =8A)
EAS
510
mJ
Operating Temperature Range
TOPR
-55 ~ +150
Storage Temperature Range
TSTG
-55 ~ +150
Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be
             functional, but does not guarantee specific performance limits.
          2.Absolute maximum ratings indicate limits beyond which damage to the device may occur.



Description

The N-Channel enhancement mode silicon gate power MOSFET UF840 is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.




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