Features: `8A, 500V, Low RDS(ON)(0.85)` Single Pulse Avalanche Energy Rated` Rugged - SOA is Power Dissipation Limited` Fast Switching Speeds`Linear Transfer Characteristics` High Input ImpedanceSpecifications Parameter Symbol Rating Unit Drain-Source Voltage(TJ =25~125) VDSS...
UF840: Features: `8A, 500V, Low RDS(ON)(0.85)` Single Pulse Avalanche Energy Rated` Rugged - SOA is Power Dissipation Limited` Fast Switching Speeds`Linear Transfer Characteristics` High Input ImpedanceSpe...
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Parameter |
Symbol |
Rating |
Unit | |
Drain-Source Voltage(TJ =25~125) |
VDSS |
500 |
V | |
Gate-Source Voltage(RGS = 20k,TJ =25~125) |
VDGR |
500 |
V | |
Gate to Source Voltage |
VGS |
±20 |
V | |
Drain Current | Continuous |
ID
|
8.0 |
A |
A | ||||
Tc =100 |
5.1 |
A | ||
Pulsed |
IDM |
32 |
A | |
Maximum Power Dissipation(Ta = 25) Derating above 25 |
PD |
125 |
W | |
1.0 |
W/ | |||
Single Pulse Avalanche Energy Rating (VDD=50V, starting TJ =25, L=14mH, RG=25, peak IAS =8A) |
EAS |
510 |
mJ | |
Operating Temperature Range |
TOPR |
-55 ~ +150 |
||
Storage Temperature Range |
TSTG |
-55 ~ +150 |
The N-Channel enhancement mode silicon gate power MOSFET UF840 is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.