Features: High-Speed Source Drivers
60 V Source Outputs
To 3.3 MHz Data Input Rate
Low-Output Saturation Voltages
Low-Power CMOS Logic and Latches
Active DMOS Pull-Downs
Reduced Supply Current Requirements
Improved Replacement for TL5812SpecificationsLogic Supply Voltage, VDD .......................... 15 V
Driver Supply Voltage, VBB .......................... 60 V
Continuous Output Current Range,
IOUT ............................................ -40 to +15 mA
Input Voltage Range,
VIN .............................. -......0.3 V to VDD + 0.3 V
Package Power Dissipation, PD
(UCQ5812AF).................................... 3.12 W*
(UCQ5812EPF) ...................................... 1.92 W=
Operating Temperature Range,
TA ............................................. -40°C to +85°C
Storage Temperature Range,
TS ............................................ -55°C to +150°C
* Derate at rate of 25 mW/°C above TA = +25°C
= Derate at rate of 15 mW/°C above TA = +25°CDescriptionThe UCQ5812AF/EPF combine a 20-bit CMOS shift register, data latches, and control circuitry with high-voltage bipolar source drivers and active DMOS pull-downs for reduced supply current requirements. Although designed primarily for vacuum-fluorescent displays, the high-voltage, highcurrent outputs also allow them to be used in other peripheral power driver applications.
The CMOS shift register and latches allow direct interfacing with microprocessor-based systems. With a 5 V supply, they will operate to at least 3.3 MHz. At 12 V, higher speeds are possible. Especially useful for inter-digit blanking, the BLANKING input disables the output source drives and turns on the DMOS sink drivers. Use with TTL may require the use of appropriate pull-up resistors to ensure an input logic high.
A CMOS serial data output enables cascade connections in applications requiring additional drive lines. Similar devices are available as the UCQ5810AF/LWF (10 bits), UCQ5811A (12 bits), and UCQ5818AF/EPF 32 bits).
The output source drivers are high-voltage PNP-NPN Darlingtons with a minimum breakdown of 60 V and are capable of sourcing up to 40 mA. The DMOS active pull-downs are capable of sinking up to 15 mA.
The UCQ5812AF is supplied in a 28-pin dual in-line plastic package with 0.600" (15.24 mm) row spacing. For surface mounting, the UCQ5812EPF is furnished in 28-lead plastic chip carrier (quad pack) with 0.050"(1.22 mm) centers. Copper lead-frames, reduced supply current requirements and lower output saturation voltages, allow continuous operation, with all outputs sourcing 25 mA, of the UCQ5812AF over the operating temperature range, and the UCQ5812EPF up to +75°C.
UCQ5812AF Data Sheet
