Features: · Matched, Four-Diode Monolithic Array· High Peak Current· Low-Cost MINIDIP Package· Low-Forward Voltage· Parallelable for Lower VF or Higher IF· Fast Recovery Time· Military Temperature Range AvailablePinoutSpecificationsPeak Inverse Voltage (per Diode). . . . . . . . . . . . . . . . . ...
UC3611_1259040: Features: · Matched, Four-Diode Monolithic Array· High Peak Current· Low-Cost MINIDIP Package· Low-Forward Voltage· Parallelable for Lower VF or Higher IF· Fast Recovery Time· Military Temperature R...
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This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on the outputs of high-speed power MOSFET drivers where Schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line.
These diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path for current free-wheeling in motor drive applications.
The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.
This single monolithic chip is fabricated in both hermetic CERDIP and copper-leaded plastic packages. The UC1611 in ceramic is designed for -55°C to +125°C environments but with reduced peak current capability: while the UC3611 in plastic has higher current rating over a 0°C to +70°C ambient temperature range