Features: * High Voltage Capability* Low Spread of Dynamic Parameters* Very High Switching SpeedSpecifications PARAMETER SYMBOL RATINGS UNIT Collector Emitter Voltage (VBE = 0) VCES 700 V Collector Emitter Voltage (IB = 0) VCEO 400 V Emitter Base Voltage (IC = 0) VEBO 9 ...
UBV45: Features: * High Voltage Capability* Low Spread of Dynamic Parameters* Very High Switching SpeedSpecifications PARAMETER SYMBOL RATINGS UNIT Collector Emitter Voltage (VBE = 0) VCES 7...
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PARAMETER | SYMBOL | RATINGS | UNIT |
Collector Emitter Voltage (VBE = 0) | VCES | 700 | V |
Collector Emitter Voltage (IB = 0) | VCEO | 400 | V |
Emitter Base Voltage (IC = 0) | VEBO | 9 | V |
Collector Current | IC | 0.75 | A |
Collector Peak Current (tp < 5 ms) | ICM | 1.5 | A |
Base Current | IB | 0.4 | A |
Base Peak Current (tp < 5 ms) | IBM | 0.75 | A |
Total Dissipation at Ta = 25°C | PD | 0.95 | W |
Junction Temperature | TJ | +150 | °C |
Storage Temperature | TSTG | -40 ~ +150 | °C |
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
The UTC UBV45 is designed for use in Compact Fluorescent Lamps.