Features: SpecificationsDescriptionThe UBT430 has the following features including Very Low On Resistance-Typically 7 milliohms;Reverse Blocking Voltage-VECS=2OV;Low Temperature Coefficient of On Resistance;Fast Switching Times Make Operation at High FrequencyEasy;High Gain Reduces Base Losses. T...
UBT430: Features: SpecificationsDescriptionThe UBT430 has the following features including Very Low On Resistance-Typically 7 milliohms;Reverse Blocking Voltage-VECS=2OV;Low Temperature Coefficient of On Re...
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The UBT430 has the following features including Very Low On Resistance-Typically 7 milliohms;Reverse Blocking Voltage-VECS=2OV;Low Temperature Coefficient of On Resistance;Fast Switching Times Make Operation at High FrequencyEasy;High Gain Reduces Base Losses.
The UBT430 is a planar NPN bipolar transistor that has been designed to optimize performance for low voltage circuits. It features a very low saturation voltage of only.30V max at 30A, and .10V at 10A. Because of its excellent switching speed (rise and fall times typically under 100ns and storage times under 500ns) it offers excellent performance even in high frequency switching circuits.This is tfie ideal transistor to use for emitter switching in off-line switching power supplies. The low drop of this device also makes it the best choice for a battery back-up circuit. Considerable improvement in efficiency can be achieved by using the UBT430 transistor in boost regulators operating off a 5V line and low voltage buck regulators. Design Note DN-20 provides additional information on the application of the UBT430 transistor.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).Full-step operation is the most commonly used drive technique. The devices are capable of unipolar drive without external active devices, either in a full-step mode (pin 11,Monostable RC, tied high),or in a double-step mode (pin 11 connected to RC timing). The double-step mode provides improved torque characteristics, while the specified angular increment is doubled.