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UB20DCT

Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capability• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)• Solder d...

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UB20DCT: Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capabilityR...

UB20DCT Data Sheet

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Part Number:
UB20DCT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/18

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Product Details

Description



Features:

• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Application

For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes,dc-to-dc converters or polarity protection specifically for DCM application.






Specifications

PARAMETER
SYMBOL
U(B)16BCT
U(B)16CCT
U(B)16DCT
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
150
200
V
Max. average forward rectified current (Fig.1) total device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
100
A
Electrostatic discharge capacitor voltage,
human body model: C = 150 pF, R = 1.5 k (contact mode)
VC
8
kV
Operating junction and storage temperature range
TJ,TSTG
- 55 to + 150





Description

U(F,B)10BCT thru U(F,B)10DCT datasheet




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