Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capability• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)• Solder di...
UB16BCT: Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capabilityR...
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For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes,dc-to-dc converters or polarity protection specifically for DCM application.
PARAMETER |
SYMBOL |
U(B)16BCT |
U(B)16CCT |
U(B)16DCT |
UNIT |
Maximum repetitive peak reverse voltage |
VRRM |
100 |
150 |
200 |
V |
Max. average forward rectified current (Fig.1) total device per diode |
IF(AV) |
16 8 |
A | ||
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM |
80 |
A | ||
Electrostatic discharge capacitor voltage, human body model: C = 150 pF, R = 1.5 k (contact mode) |
VC |
8 |
kV | ||
Operating junction and storage temperature range |
TJ,TSTG |
- 55 to + 150 |