U632H16

Features: ` High-performance CMOS nonvolatile static RAM 2048 x 8 bits` 25 ns Access Times` 12 ns Output Enable Access Times` ICC = 15 mA at 200 ns Cycle Time` Automatic STORE to EEPROM on Power Down using external capacitor` Hardware or Software initiatedSTORE(STORE Cycle Time < 10 ms)` Automa...

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SeekIC No. : 004535006 Detail

U632H16: Features: ` High-performance CMOS nonvolatile static RAM 2048 x 8 bits` 25 ns Access Times` 12 ns Output Enable Access Times` ICC = 15 mA at 200 ns Cycle Time` Automatic STORE to EEPROM on Power Dow...

floor Price/Ceiling Price

Part Number:
U632H16
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/7

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Product Details

Description



Features:

` High-performance CMOS nonvolatile static RAM 2048 x 8 bits
` 25 ns Access Times
` 12 ns Output Enable Access Times
` ICC = 15 mA at 200 ns Cycle Time
` Automatic STORE to EEPROM on Power Down using external capacitor
` Hardware or Software initiated
STORE
(STORE Cycle Time < 10 ms)
` Automatic STORE Timing
` 106 STORE cycles to EEPROM
100 years data retention in EEPROM
` Automatic RECALL on Power Up
` Software RECALL Initiation (RECALL Cycle Time < 20 s)
` Unlimited RECALL cycles from EEPROM
` Single 5 V ± 10 % Operation Operating temperature ranges:
0 to 70
-40 to 85
` QS 9000 Quality Standard
` ESD protection > 2000 V (MIL STD 883C M3015.7-HBM)
RoHS compliance and Pb- free Package: SOP28 (300 mil)




Pinout

  Connection Diagram


Specifications

Absolute Maximum Ratingsa Symbol Min. Max. Unit
Power Supply Voltage
Input Voltage
VCC
VI
-0.5
-0.3
7
VCC+0.5
V
V
Output Voltage
Power Dissipation
VO
PD
-0.3

VCC+0.5
1
V
W
Operating Temperature C-Type
K-Type
Ta 0
-40
70
85

Storage Temperature Tstg -65 150


a: Stresses greater than those listed under „Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The U632H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions of U632H16 are disabled.

The U632H16 is a fast static RAM (25, 35, 45 ns), with a nonvolatile  electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The  SRAM U632H16 can be read and written an unlimited number of times, while independent nonvolatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 F capacitor. Transfers from the EEPROM to the SRAM (the RECALL operation) take place automatically on power up. The U632H16 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.

STORE cycles U632H16 also may be initiated under user control via a software sequence or via a single pin (HSB).

Once a STORE U632H16 cycle is initiated, further input or output are disabled until the cycle is completed.

Because a sequence of addresses is used for STORE initiation, it is important that no other read or write accesses intervene in the sequence or the sequence will be aborted.

RECALL U632H16 cycles may also be initiated by a software sequence.

Internally, RECALL U632H16 is a two step procedure. First, the SRAM data is cleared and second, the nonvolatile information is transferred into the SRAM cells.

The RECALL U632H16 operation in no way alters the data in the EEPROM cells. The nonvolatile data can be recalled an unlimited number of times.




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