U630H16XS

The U630H16 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad.

In SRAM mode, the memory operates as an ordinary static RAM. In non-volatile operation, data of U630H16 is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

The U630H16 is a fast static RAM (25, 35, 45 ns), with a non-volatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM U630H16 can be read and written an unlimited number of times, while independent non-volatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM U630H16 (the STORE operation), or from the  EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE  pad.

The U630H16 combines the high performance and ease of use of a fast SRAM with non-volatile data integrity.

Once a STORE cycle U630H16 is initiated,further input or output are disabled until the cycle is completed.

Internally, RECALL U630H16 is a two step procedure. First, the SRAM data is cleared and second, the non-volatile information is transferred into the SRAM cells.

The RECALL U630H16 operation in no way alters the data in the EEPROM cells. The non-volatile data can be recalled an unlimited number of times.

The chips are tested with a restricted wafer probe program at room temperature only. Untested parameters are marked with a number sign (#).