Features: · High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical · Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical · Low NoiseApplication· Differential Wideband Amplifiers · VHF/UHF Amplifiers · Test and Measurement · Multi-Chip/HybridsSpecifica...
U443: Features: · High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical · Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical · Low NoiseApplication· Differ...
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· High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical
· Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical
· Low Noise
· Differential Wideband Amplifiers
· VHF/UHF Amplifiers
· Test and Measurement
· Multi-Chip/Hybrids
Parameter/Test Condition |
Symbol |
Limit |
Unti |
Gate-Drain Voltage |
VGD |
-25 |
V |
Gate-Source Voltage |
VGS |
-25 |
V |
Gate-Gate Voltage |
VGG |
±50 |
V |
Forward Gate Current |
IG |
50 |
mA |
Power Dissipation (per side) (total) |
PD |
367 500 |
mW mW |
Power Derating (per side) (total) |
3 |
mW/ mW/ | |
Operating Junction Temperature |
TJ |
-55 to 150 |
|
Storage Temperature |
Tstg |
-65 to 200 |
|
Lead Temperature (1/16" from case for 10 seconds) |
TL |
300 |
The U443 Series is an N-Channel Monolithic Dual JFET designed for high speed amplifier circuits. Featuring high gain
( > 6 mS typical), low leakage (< 1pA typical) and low noise U443 is an excellent choice for high performance test
and measurement, wideband amplifiers and VHF/UHF circuits.