U430

Drain Source Voltage VDS :
Drain Current (Idss at Vgs=0) :
Continuous Drain Current :
Gate-Source Breakdown Voltage : - 25 V
Transistor Polarity : P-Channel
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Dual
Package / Case : TO-78


Features:

· Two-Chip Design
· High Slew Rate
· Low Offset/Drift Voltage
· Low Gate Leakage: 15 pA
· Low Noise
· High CMRR: 75 dB




Application

· Wideband Differential Amps
· High-Speed, Temp-Compensated,Single-Ended Input Amps
· High-Speed Comparators
· Impedance Converters




Specifications

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 200
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150
Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW

Notes
a. Derate 2.4 mW/above 25
b. Derate 4 mW/above 25

Description

The U430/431 are matched JFET pairs assembled in a TO-78 package. These devices offer good power gain even at
frequencies beyond 250 MHz.

The TO-78 package of U430/431 is available with full military processing (see Military Information).

For similar products, see the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets.