JFET 450MHz Amp
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Transistor Polarity : | P-Channel | Gate-Source Breakdown Voltage : | - 25 V | ||
Configuration : | Single | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Bulk |
· High Power Gain
· Low Noise
· Dynamic Range Greater The 100dB
· Easily Matched to 75W Input
(TA = 25 unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . ... . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Storage Temperature. . . . . . . . . . . . . . . . . .. -65 to +200
Operating Temperature Range . . . . . . . . . . . -55 to +150
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25 . . . . . . . . . . . . . . . .. . .. . . . . . . . . 4mW/
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.