U20FL2C48A

Features:

· Repetitive Peak Reverse Voltage : V_RRM = 200 V, 300 V
· Average Output Rectified Current : I_O = 20 A
· Ultra Fast Reverse-Recovery Time : _trr = 35 ns (Max)
· Low Switching Losses and Output Noise




Specifications

CHARACTERISTIC		SYMBOL	RATING	UNIT
Repetitive Peak Reverse Voltage	20DL2C48A	VRRM	200	V
	U20DL2C48A
	20FL2C48A		300
	U20FL2C48A
Average Output Rectified Current		IO	20	A
Peak One Cycle Surge Forward Current		IFSM	100 (50Hz)	A
			110 (60Hz)
Junction Temparature		Tj	−40~150
Storage Temparature Range		Tstg	−40~150	0 to +85

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).




Description

The U20FL2C48A is a kind of high efficiency diode stack (HED) silicon epitaxial type. It is designed for switching type power supply application and converter & chopper application.

There are some features of U20FL2C48A as follows: (1)repetitive peak reverse voltage: VRRM=300 V; (2)average output rectified current: IO=20 A; (3)ultra fast reverse-recovery time: tTT=35 ns MAX; (4)low switching losses and output noise.

The following is about the maximum ratings of U20FL2C48A: (1)repetitive peak reverse voltage, VRRM: 300 V; (2)average output rectified current, IO: 20 A; (3)peak one cycle surge forward current, IFSM: 100 A (50 Hz) and 110 A (60 Hz); (4)junction temperature, Tj: -40 to 150; (5)storage temperature range, Tstg: -40 to 150.