DescriptionThe U1B4B42 is a kind of rectifier stack. It is silicon diffused type. The U1B4B42device is intended for single phase bridge rectifier applications. There are some features as follows: (1)average output rectified current: IO(AV)=1.0 A (Ta=25); (2)repetitive peak reverse voltage: VRRM=10...
U1B4B42: DescriptionThe U1B4B42 is a kind of rectifier stack. It is silicon diffused type. The U1B4B42device is intended for single phase bridge rectifier applications. There are some features as follows: (1...
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The U1B4B42 is a kind of rectifier stack. It is silicon diffused type. The U1B4B42 device is intended for single phase bridge rectifier applications. There are some features as follows: (1)average output rectified current: IO(AV)=1.0 A (Ta=25); (2)repetitive peak reverse voltage: VRRM=100 V.
The following is about the maximum ratings of U1B4B42: (1)repetitive peak reverse voltage, VRRM: 100 V; (2)average output rectified current, IO: 1.0 A; (3)peak one cycle surge forward current (non-repetitive), IFSM: 30 A (50 Hz) and 33 A (60 Hz); (4)junction temperature, Tj: -40 to 150; (5)storage temperature range, Tstg: -40 to 150.
The last one is about the electrica characteristics of U1B4B42(Ta=25): (1)peak forward voltage, VFM: 1.0 V max at IFM=0.5 A; (2)repetitive peak reverse current, IRRM: 10A max at VRRM=rated; (3)thermal resistance (junction to ambient), DC, Rth(j-a): 75/W max.