Features: SpecificationsDescriptionU18-G03-D-K and U18L-G03-D-K are two kinds of U18. U18-G03-D-K is a semiconductor integrated circuit utilizing the Hall effect. U18-G03-D-K has been so designed as to operate in the alternating magnetic field especially at low supply voltage and operation over e...
U18-G03-D-K: Features: SpecificationsDescriptionU18-G03-D-K and U18L-G03-D-K are two kinds of U18. U18-G03-D-K is a semiconductor integrated circuit utilizing the Hall effect. U18-G03-D-K has been so designed a...
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U18-G03-D-K and U18L-G03-D-K are two kinds of U18.
U18-G03-D-K is a semiconductor integrated circuit utilizing the Hall effect. U18-G03-D-K has been so designed as to operate in the alternating magnetic field especially at low supply voltage and operation over extended temperature ranges to +125 .This Hall IC is suitable for application to various kinds of sensors, contact less switches, and the like.
The U18-G03-D-K possesses the features of Wide supply voltage range of 2.5V to 20V, Wide temperature operation range of -20 ~+125 , Alternating magnetic field operation, TTL and MOS IC are directly drivable by the output, The life is semipermanent because it employs contact less parts, SIP-3 package. The U18 can be applicated in Speed sensor, Position sensor, Rotation sensor, Contact-less sensor, Motor control, Built-in protection diode.
The absolute maximum ratings of U18-G03-D-K are Supply Voltage(VCC)=2.5V ~ 20V, Supply Current(ICC)=10 mA, Circuit Current(IOUT)=20 mA, Power Dissipation(PD)400 mW, Operating Temperature(TOPR)=-20~+125 , Storage Temperature(TSTG)=-40~+150.(Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0~+70 operating temperature range and assured by design from -20~+125. )
The electrical characteristics of U18-G03-D-K are Low-Level Output Voltage(VOL)=0.7V (max) (VCC=16V,IOUT=12mA,B=30mT )/0.7V(VCC=3.6V,IOUT=12mA,B=30mT ), Output Leakage Current(IO (LEAK)) (@VCC=16V,B=-30mT)=1(typ)10(max) µA, Output Short Circuit Current( -Ios)(@VCC=16V,VOUT=0V,B=-30mT)=0.8(typ)mA, Supply Current(ICC)=6mA(VCC=16V)/5.5mA (VCC=3.6V), Operate Point (BOP)(At Ta = +25)=5mT, Release Point(BRP)(At Ta = +25)=-5mT, Hysteresis(BHYS)(At Ta = +25)=5.5mT.(Note 1.BOP = operate point (output turns ON ); BRP = release point ( output turns OFF); BHYS = hysteresis (BOP BRP).As used here, negative flux densities are defined as less than zero (algebraic convention). Typical values are at Ta = +25 and VCC = 12V. 2.1mT=10 gauss).