U110A

The U110A is designed as one kind of N-channel power MOSFET, U110A has some important features such as:(1)avalanche rugged technology;(2)rugged gate oxide technology;(3)lower input capacitance;(4)improved gate charge;(5)extended safe operating area;(6)lower leakage current:10mA (Max.) @ VDS =100V;(7)lower RDS(ON):0.336W (Typ.).

The absolute maximum ratings of the U110A can be summarized as:(1)drain-to-source voltage:100 V;(2)continuous drain current (TC=25°C):4.7 A;(3)continuous drain current (TC=100°C):3 A;(4)drain current-pulsed:16 A;(5)gate-to-source voltage:±20V;(6)single pulsed avalanche energy:58 mJ;(7)avalanche current:4.7 A;(8)maximum Lead Temp.for soldering purposes,1/8 from case for 5-seconds:300;(9)operating junction and storage temperature range:-55 to +150;(10)total power dissipation (TC=25°C):22 W;(11)repetitive avalanche energy:2.2 mJ.If you want to know more information about U110A,please download the datasheet in www.seekic.com and www.chinaicmart.com .