Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capability• High frequency operation• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for T...
U10DCT: Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capabilityR...
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Features: · Repetitive Peak Reverse Voltage : VRRM = 200 V, 300 V· Average Output Rectified Curren...
For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes,dc-to-dc converters or polarity protection application.
PARAMETER |
SYMBOL |
U(F,B)10BCT |
U(F,B)10CCT |
U(F,B)10DCT |
UNIT |
Maximum repetitive peak reverse voltage |
VRRM |
100 |
150 |
200 |
V |
Maximum average forward current |
IF(AV) |
10 5 |
A | ||
Maximum peak one cycle non-repetitive surge current |
IFSM |
55 | |||
Electrostatic discharge capacitor voltage, human body model: C = 150 pF, R = 1.5 k (contact mode) |
VC |
8 |
kV | ||
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min per diode |
VAC |
1500 |
V | ||
Operating junction and storage temperature range |
TJ,TSTG |
- 55 to + 150 |