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Specifications Periodische Vorwärts- und Rückwärts-Spitzensperrspannungrepetitive peak forward off-state and reverse voltages Tvj = -40°C... Tvj max VDRM,VRRM 1800 200022002400 V Vorwärts-Stoßspitzensperrspannungnon-repetitive peak forward off-state voltage Tvj ...

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TZ430N: Specifications Periodische Vorwärts- und Rückwärts-Spitzensperrspannungrepetitive peak forward off-state and reverse voltages Tvj = -40°C... Tvj max VDRM,VRRM 1800 200022002400 ...

TZ430N Data Sheet

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Part Number:: TZ430N
Supply Ability:: 5000

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Upload time: 2024/11/21

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TZ430N18KOF evaluate
US $110.88 - 122.76 / Piece

Discrete Semiconductor Modules 2200V 1050A SINGLE
TZ430N20KOF evaluate
US $122.37 - 135.43 / Piece

Discrete Semiconductor Modules 2200V 1050A SINGLE
TZ430N22KOF evaluate
US $133.53 - 148.37 / Piece

Discrete Semiconductor Modules 2200V 1050A SINGLE

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Specifications

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages	T_vj= -40°C... T_{vj max}	V_DRM,V_RRM	1800 2000 22002400	V
Vorwärts-Stoßspitzensperrspannung non-repetitive peak forward off-state voltage	T_vj = -40°C... T_vj _max	V_DSM	1800 2000 22002400	V
Rückwärts-Stoßspitzensperrspannung non-repetitive peak reverse voltage	T_vj = +25°C... T_{vj max}	V_RSM	1900 2100 2300 2500	V
Durchlaßstrom-Grenzeffektivwert maximum RMS on-state current		I_TRMSM	1500	V
Dauergrenzstrom average on-state current	T_C= 85°C T_C= 51°C	I_TAVM	430 669	V
Stoßstrom-Grenzwert surge current	T_vj= 25 °C, _tP= 10 ms T_vj= T_{vj max}, _tP= 10 ms	I_TSM	14000 12000	V
Grenzlastintegral I²t-value	T_vj= 25 °C, _tP= 10 ms T_vj= T_{vj max}, _tP= 10 ms	I²t	980000 720000	A²s A²s
Kritische Stromsteilheit critical rate of rise of on-state current	DIN IEC 747-6 f = 50 Hz, iGM = 1 A, diG/dt = 1 A/s	(diT/dt)_cr	150	A/s
Kritische Spannungssteilheit critical rate of rise of off-state voltage	T_vj= T_vj _max, v_D= 0,67 V_DRM 6.Kennbuchstabe / 6^th letter C 6.Kennbuchstabe / 6^th letter F	(dvD/dt)_cr	500 1000	V/s

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TZ430N

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