TXDV412

The TXDV412 is designed as a alternistor which use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, it is well adapted to power control on inductive load.

TXDV412 has three features. (1)Very high commutation which >42.5A/ms (400Hz). (2)Insulating voltage which would be 2500Vrms (UL recognized E81734). (3)dV/dt is 500V/us min. Those are all the main features.

Some absolute maximum ratings of TXDV412 have been concluded into several points as follow. (1)Its RMS on-state current would be 12A. (2)Its non-repetitive surge peak on-state current would be 170A at tp=2.5ms and would be 125A at tp=8.3ms and would be 120A at tp=10ms. (3)Its I2t value would be 72A2s. (4)Its critival rate of rise of on-state current with gate supplt Ig=500mA and diG/dt=1A/us would be 20A/us for repetitive 50Hz and would be 100A/us for non repetitive. (5)Its storage temperaturen range would be from -40°C to 150°C. (6)Its junction temperature range would be from -40°C to 125°C. (7)Its maximum lead temperature for soldering during 10s at 4.5mm from case would be 260°C. (8)Its repetitive peak off-state voltage would be 400V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of TXDV412 are concluded as follow. (1)Its Igt would be max 100mA. (2)Its Vgt would be max 1.5V. (3)Its Vgd would be min 0.2V. (4)Its tgt would be typ 2.5us. (5)Its IL would be typ 100mA. (6)Its Ih would be max 100mA. (7)Its Vtm would be max 1.95V. (8)Its Idrm would be max 0.01mA. (9)Its Irrm would be max 2mA. (10)Its dV/dt would be min 500V/us. (11)Its (dl/dt)c (for either polarity of electrode A2 voltage with reference to electrode A1.) would be min 10A/ms with conditions of 200V/us and would be min 42.5A/ms with conditions of 10V/us. And so on. If you have any question or suggestion or want to know more information of TXDV412 please contact us for details. Thank you!