TX38D01VM1AA

The TX38D01VM1AA is designed as one kind of NPN silicon planar R.F. medium power transistor that has four points of features: (1)1W POUT at 175 MHz, 28V, 18dB typical; (2)1W POUT at 400 MHz, 28V, 9.7dB typical; (3)High Ptot; (4)High efficiency.

The absolute maximum ratings of the TX38D01VM1AA can be summarized as:(1)Collector-Base Voltage: 55 V;(2)Collector-Emitter Voltage VCEO: 30 V;(3)Collector-Emitter Voltage VCER: 55 V;(4)Emitter-Base Voltage: 3.5 V;(5)Continuous Collector Current: 400 mA;(6)Power Dissipation: 350 mW;(7)Operating and Storage Temperature Range: -55 to +175 °C.

The electrical characteristics of the TX38D01VM1AA can be summarized as:(1)Collector-Base Breakdown Voltage: 55 V;(2)Collector-Emitter Breakdown Voltage: 30 V;(3)Emitter-Base Breakdown Voltage: 3.5 V;(4)Collector Emitter Cut-Off Current: 20 uA;(5)Collector-Emitter Saturation Voltage: 1.0 V;(6)Collector-Emitter Sustaining Voltage: 55 V;(7)Static Forward Current Transfer: 15 200;(8)Transitional Frequency: 400 to 700 MHz;(9)Output Capacitance: 3.0 pF;(10)R.F. Power Output: 700 to 900 mW. If you want to know more information such as the electrical characteristics about the TX38D01VM1AA, please download the datasheet in www.seekic.com or www.chinaicmart.com.