TX-2835

The TX-2835 is a kind of epitaxila, planar passivated diode. Its construction adoptes a metal-to-silicon junction which results extremely low forward voltage drops and ultr high speed switching for applications that require high reliability screening. The low forward voltage drop, combined with fast switching and high temperature capability, makes the device attractive as replacements for germanium and silicon P/N junction diodes in such applications as low level switching, clamping, sampling, reference circuits, and low noise IHF mixers.

There are some features of TX-2835 as follows: (1) suitable for space applications; (2)low turn-on voltage; (3)fast switching; (4)planar passivated; (5)low temperature coefficient; (6)iniform forward tracking; (7)quality performance tested.

The following is about the absolute maximum ratings of TX-2835: (1)power dissipation at TCASE=25: 150 mW; (2)operating temperating range: -60 to +150; (3)storage temperature range: -60 to +150.