Breakover Voltage VBO
:
Breakover Current IBO Max
:
Off-State Capacitance CO
:
Maximum Operating Temperature
:
Holding Current (Ih Max)
:
Mounting Style
: SMD/SMT
Rated Repetitive Off-State Voltage VDRM
: 170 V
Off-State Leakage Current @ VDRM IDRM
: 0.005 mA
Package / Case
: SMB
On-State Voltage
: 5 V
Non Repetitive On-State Current
: 100 A
Features: SpecificationsDescriptionThe TVB170SA has some specifications,the first is device ratings @ 25°C(both polarities):(1)off-state voltage, maximum at ID=5A:170 V;(2)non-repetitive peak impulse current:50 A;(3)double exponential waveform:70 A;(4)critical rate of rise of on-state current maximum 2x10 sec waveform, VOC=2.5kV, ISC=500A peak:150 A/s.
The device thermal ratings of the TVB170SA are:(1)storage temperature range:-65 to 150ºC;(2)operating temperature range(blocking or conducting state):-40 to 125ºC;(3)overload junction temperature maximum;conducting state only:+175ºC.
Electrical characteristics of the TVB170SA are also very important:(1)breakover voltage(dV/dt=100V/sec, ISC=1.0A, VDC=1000V):230 V;(2)breakover voltage(f=60Hz, ISC=1.0Arms, VOC=1000Vrms,R=1.0 k, t=0.5 cycle):230 V;(3)breakover voltage temperature coefficient:0.08%/ºC;(4)off-State current(VD1=50V):2.0A,off-State current(VD2=VDM):5.0A;(5)breakover current:230 mA;(6)holding current:350 mA;(7)critical rate of rise of off-State voltage(linear waveform, VD=0.8 X Rated VBO, TJ= +25ºC):2000 V/s.
TVB170SA Data Sheet
