TTS3816B4E

Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed address• Four-banks operation• MRS cycle with address key programs-. CAS latency (2 & 3)-. Burst length (1, 2, 4, 8 & Full page)-. Burst type (Sequential & Interleave)• All inp...

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TTS3816B4E Picture
SeekIC No. : 004533720 Detail

TTS3816B4E: Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed address• Four-banks operation• MRS cycle with address key programs-. CAS latency (2 & 3)-....

floor Price/Ceiling Price

Part Number:
TTS3816B4E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four-banks operation
• MRS cycle with address key programs-. CAS latency (2 & 3)-. Burst length (1, 2, 4, 8 & Full page)-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA



Description

The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits,fabricated with M'tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications




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