Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed address• Four-banks operation• MRS cycle with address key programs-. CAS latency (2 & 3)-. Burst length (1, 2, 4, 8 & Full page)-. Burst type (Sequential & Interleave)• All inp...
TTS3816B4E: Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed address• Four-banks operation• MRS cycle with address key programs-. CAS latency (2 & 3)-....
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Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
Voltage on VCC supply relative to VSS |
VCC, VCCQ |
-1.0 ~ 4.6 |
V |
Storage temperature |
TSTG |
-55 ~ +150 |
|
Power dissipation |
PD |
1 |
W |
Short circuit current |
IOS |
50 |
mA |
The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits,fabricated with M'tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications