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TT8J21TR

MOSFET P Chan-20V-2.5A Mid-PowerSwitching

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SeekIC No. : 00158353 Detail

TT8J21TR: MOSFET P Chan-20V-2.5A Mid-PowerSwitching

TT8J21TR Data Sheet

floor Price/Ceiling Price

US $ .16~.17 / Piece | Get Latest Price
Part Number:
TT8J21TR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • 3000~6000
  • 6000~12000
  • Unit Price
  • $.17
  • $.16
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 68 mOhms at 4.5 V Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSST-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Gate-Source Breakdown Voltage : +/- 10 V
Continuous Drain Current : 2.5 A
Package / Case : TSST-8
Resistance Drain-Source RDS (on) : 68 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationTT8J21TR
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.5A
Rds On (Max) @ Id, Vgs68 mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) @ Vds 1270pF @ 10V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 4.5V
Package / Case*
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TT8J21TR
TT8J21TR



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