TT3031NP

Features: • Adoption of MBIT processes.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• High-speed switching applications (switching regulator, driver circuit).Pinout Specifications Parameter Symbol C...

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SeekIC No. : 004533670 Detail

TT3031NP: Features: • Adoption of MBIT processes.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• High-speed switchin...

floor Price/Ceiling Price

Part Number:
TT3031NP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Adoption of MBIT processes.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.





Application

• High-speed switching applications (switching regulator, driver circuit).




Pinout






Specifications

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO -50 V
Collector-to-Emitter Voltage VCEO -50 V
Emitter-to-Base Voltage VEBO -6 V
Drain Current (DC) IC -3 A
Drain Current (Pulse) ICP PW1s, duty cycle10% -5 A
Base Current IB Tc=25 -1 A
Collector Dissipation PC 0.8 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 to +150


Absolute maximum ratings
VCEO [V] 50
IC [A] 3
PC [W] 0.8
Electrical characteristics
hFE min 200
hFE max 500
VCE [V] 2
IC [A] 0.125
VCE (sat) typ [V] 0.25
VCE (sat) max [V] 0.5
IC [A] 2.5
IB [mA] 125





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