Features: • Adoption of MBIT processes.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• High-speed switching applications (switching regulator, driver circuit).Pinout Specifications Parameter Symbol C...
TT3031NP: Features: • Adoption of MBIT processes.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• High-speed switchin...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage | VCBO | -50 | V | |
Collector-to-Emitter Voltage | VCEO | -50 | V | |
Emitter-to-Base Voltage | VEBO | -6 | V | |
Drain Current (DC) | IC | -3 | A | |
Drain Current (Pulse) | ICP | PW1s, duty cycle10% | -5 | A |
Base Current | IB | Tc=25 | -1 | A |
Collector Dissipation | PC | 0.8 | W | |
Junction Temperature | Tj | 150 | ||
Storage Temperature | Tstg | -55 to +150 |
Absolute maximum ratings | |
---|---|
VCEO [V] | 50 |
IC [A] | 3 |
PC [W] | 0.8 |
Electrical characteristics | |
---|---|
hFE min | 200 |
hFE max | 500 |
VCE [V] | 2 |
IC [A] | 0.125 |
VCE (sat) typ [V] | 0.25 |
VCE (sat) max [V] | 0.5 |
IC [A] | 2.5 |
IB [mA] | 125 |