Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.Pinout Specifications Parameter Symbol Conditions Rating Unit Collector-Emitter Voltage VCBO ...
TT2234: Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.Pinout Speci...
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Parameter | Symbol | Conditions | Rating | Unit | |
Collector-Emitter Voltage | VCBO | 1500 | V | ||
Collector-Base Voltage | VCEO | 800 | V | ||
Emitter-Base Voltage | VEBO | 5 | V | ||
Continuous collector current | IC | 5 | A | ||
Peak pulse current(pulse) | ICP | 12 | A | ||
Collector dissipation | PC | 3.0 | W | ||
Tc=25°C | 55 | ||||
Junction Temperature | TJ | 150 | |||
storage temperature | TSTG | -55 to +150 |
Absolute maximum ratings | |
---|---|
VCBO [V] | 1500 |
VCEO [V] | 800 |
IC [A] | 5 |
PC[W] | 55
Tc=25°C |
Electrical characteristics | |
---|---|
hFE min | 5 |
hFE max | 8 |
VCE [V] | 5 |
IC [A] | 3 |
VCE (sat) max [V] | 3 |
IC [A] | 2.7 |
IB [A] | 0.54 |
tf max [µs] | 0.3 |