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TT2170LS

Features: • High speed.• High breakdown voltage(VCBO=1500V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.Pinout Specifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ...

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TT2170LS: Features: • High speed.• High breakdown voltage(VCBO=1500V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.Pinout Specifi...

TT2170LS Data Sheet

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Part Number:
TT2170LS
Supply Ability:
5000

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Product Details

Description



Features:

• High speed.
• High breakdown voltage(VCBO=1500V).
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.




Pinout






Specifications

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 1500 V
Collector-to-Emitter Voltage VCEO 800 V
Emitter-to-Base Voltage VEBO 5 V
Collector Current IC 5 A
Collector Current (Pulse) ICP 12 A
Collector Dissipation PC 2.0 W
Tc=25°C 25 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55 to +150 °C


Absolute maximum ratings
VCBO [V] 1500
VCEO [V] 800
IC [A] 5
PC[W] 25
Tc=25°C
Electrical characteristics
hFE min 5
hFE max 8
VCE [V] 5
IC [A] 3
VCE (sat) max [V] 3
IC [A] 2.7
IB [A] 0.54
tf max [µs] 0.3





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