Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.Pinout Specifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 1500 V VCEO ...
TT2138LS: Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.Pinout Speci...
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SYMBOL | PARAMETER | RATING | UNIT |
VCBO | Collector to base voltage | 1500 | V |
VCEO | Collector to emitter voltage | 800 | V |
VEBO | Emitter to base voltage | 5 | V |
IC | Collector current | 3.5 | A |
ICP | Collector current (pulse) | 9 | A |
PC | Collector dissipation | 2.0 | W |
PC | Collector dissipationTC = 25 | 25 | W |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -55 to +150 |
Absolute maximum ratings | |
---|---|
VCBO [V] | 1500 |
VCEO [V] | 800 |
IC [A] | 3.5 |
PC[W] | 25
Tc=25°C |
Electrical characteristics | |
---|---|
hFE min | 5 |
hFE max | 8 |
VCE [V] | 5 |
IC [A] | 2 |
VCE (sat) max [V] | 3 |
IC [A] | 1.8 |
IB [A] | 0.36 |
tf max [µs] | 0.3 |