DescriptionThe features of TT2062 are as follows: (1)High speed.; (2)High breakdown voltage (VCBO=1500V).; (3)High reliability (Adoption of HVP process).; (4)Adoption of MBIT process. What comes next is the maximum ratings of TT2062 : (1)Collector-to-Base Voltage: 1500V; (2)Collector-to-Emitter V...
TT2062: DescriptionThe features of TT2062 are as follows: (1)High speed.; (2)High breakdown voltage (VCBO=1500V).; (3)High reliability (Adoption of HVP process).; (4)Adoption of MBIT process. What comes ne...
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The features of TT2062 are as follows: (1)High speed.; (2)High breakdown voltage (VCBO=1500V).; (3)High reliability (Adoption of HVP process).; (4)Adoption of MBIT process.
What comes next is the maximum ratings of TT2062 : (1)Collector-to-Base Voltage: 1500V; (2)Collector-to-Emitter Voltage: 800V; (3)Emitter-to-Base Voltage: 5V; (4)Collector Current: 18A; (5)Collector Current (Pulse): 35A; (6)Collector Dissipation PC: 3.0 W ; (7)Junction Temperature: 150 °C ; (8)Storage Temperature: -55 to +150 °C.
The following is the electrical characteristics of TT2062: (1)collector cutoff current: 10A at VCB=800V, IE=0; (2)collector cutoff current: 1.0mA at VCE=1500V, RBE=0; (3)collector sustain voltage: 800V at IC=100mA, IB=0; (4)emitter cutoff current: 1.0mA at VEB=4V, IC=0; (5)collector-to-emitter saturation voltage: 3V at IC=10.8A, IB=2.7A; (6)base-to-emitter saturation voltage: 1.5V at IC=10.8A, IB=2.7A; (7)DC current gain: 15 at VCE=5V, IC=1.0A; (8)storage time: 3.0s at IC=7A, IB1=1.4A, IB2=-2.8A; (9)fall time: 0.2s at IC=7A, IB1=1.4A, IB2=-2.8A.