Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.Specifications Parameter Symbol Conditions Ratings Unit Collector-to-Base VoltageCollector-to-Emitter VoltageEmitter-to-Base Volt...
TT2054: Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.Specifications Parameter Symbol Co...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) |
VCBO VCEO VEBO IC ICP |
1500 800 5 24 40 |
V V V A A | |
Collector Dissipation | PC | Tc=25°C | 3.0 | W |
95 | W | |||
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | --55 to +150 | °C |