Features: SpecificationsDescriptionThe TT2050 is one kind of ultrahigh-definition CRT display,features of TT2050 are:(1)high speed;(2)high breakdown voltage(Vcbo=1500 V);(3)high reliability(adoption of HVP process);(4)adoption of MBIT process;(5)on-chip damper diode. Absolute maximum ratings of t...
TT2050: Features: SpecificationsDescriptionThe TT2050 is one kind of ultrahigh-definition CRT display,features of TT2050 are:(1)high speed;(2)high breakdown voltage(Vcbo=1500 V);(3)high reliability(adoption...
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The TT2050 is one kind of ultrahigh-definition CRT display,features of TT2050 are:(1)high speed;(2)high breakdown voltage(Vcbo=1500 V);(3)high reliability(adoption of HVP process);(4)adoption of MBIT process;(5)on-chip damper diode.
Absolute maximum ratings of the TT2050 can be summerized as:(1)collector-to-base voltage:1500 V;(2)collector-to-emitter voltage:800 V;(3)emitter-to-base voltage:5 V;(4)collector current:12 A;(5)collector current(pulse):25 A;(6)collector dissipation:3.0 W and 80 W(Tc=25°C );(7)junction temperature:150°C ;(8)storage temperature:-55°C to +150°C .The electrical characteristics at Ta=25°C of TT2050 are:(1)collector cutoff current(Vcb=800V,Ie=0):10 uA;(2)collector cutoff current(Vce=1500V,Rbe=0):1.0 mA;(3)collector sustain voltage(Ic=100 mA,Ib=0):800 V and (4)emitter cutoff current(Veb=4 V,Ic=0):40 to 130 mA;(5)collector-to-emitter saturation voltage(Ic=7.2A,Ib=1.8A):3 V;(6)base-to-emitter saturation voltage:1.5 V;(7)DC current gain(Vce=5 V,Ic=1A):15,DC current gain(Vce=5 V,Ic=8A):4;(8)diode forward voltage(Iec=8 A):2.0 V;(9)storage time(Ic=5A,Ib1=1A,Ib2=-2A):3.0 us;(10)fall time(Ic=5A,Ib1=1A,Ib2=-2A):0.1 us.