TSTA7100

Beam Angle :
Minimum Operating Temperature :
Packaging : Bulk
Maximum Operating Temperature : + 100 C
Package / Case : TO-18
Radiant Intensity : 50 mW/sr
Wavelength : 875 nm


Features:

Extra high radiant intensity
High radiant power
Suitable for pulse operation
Narrow angle of half intensity = ± 5°
Peak wavelength _p = 875 nm
High reliability
Good spectral matching to Si photodetectors




Application

Radiation source in near infrared range




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse Voltage		VR	5	V
Forward Current		IF	100	mA
Peak Forward Current	tp/T = 0.5, tp = 100 s	IFM	200	mA
Surge Forward Current	tp = 100 s	IFSM	2.5	A
Power Dissipation		PV	180	mW
	Tcase 25	PV	500	mW
Junction Temperature		Tj	100
Storage Temperature Range		Tstg	55...+100
Thermal Resistance Junction/Ambient		RthJA	450	K/W
Thermal Resistance Junction/Case		RthJC	150	K/W

Description

TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO18 package. Its glass lens provides a very high radiant intensity without external optics.