Features: SpecificationsDescriptionThe TST0900 is a GaAs monolithic microwave IC.Using MESFET technology the device integrates a three stage power amplifier and a DC/DC converter.The IC also features a gain control and is optimized for minimum external components.The TST0900 is designed for genera...
TST0900: Features: SpecificationsDescriptionThe TST0900 is a GaAs monolithic microwave IC.Using MESFET technology the device integrates a three stage power amplifier and a DC/DC converter.The IC also feature...
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The TST0900 is a GaAs monolithic microwave IC.Using MESFET technology the device integrates a three stage power amplifier and a DC/DC converter.The IC also features a gain control and is optimized for minimum external components.The TST0900 is designed for generating the output power,up to 35 dBm,in GSM cellular phones.The single DC supply voltage should be connected to elements of rechargeable cells giving a nominal voltage of 4.8 V.The IC is available in a shrinked small outline 28-pin(SSO28) package with heat slug.
The main features of the TST0900 are:(1)single supply:4.8 V;(2)35 dBm output power;(3)high efficiency:45%;(4)built-in gain control;(5)SSOP28 plastic package;(6)50 input impedance.Also the TST0900 has some benefits:the first is low cost,the second is small size and the third is surface mount package,low external part count,the last one is small SSO28 package.
The main characteristics are:(1)operating frequency range:880 to 915 MHz;(2)maximum output power range:-20 to +35 dBm;(3)power added efficiency at pout max:45%;(4)RF input power:0 to 15 dBm.When the supply voltage=4.8 V,Pin=0 dBm,Tamb=25,the electrical characteristic are:(1)operating voltage:2.9 to 5.25 V;(2)operating frequency range:880 to 915 MHz;(3)output power at typical PAE:35 dBm;(4)minimum output power:-20 dBm;(5)output controlled power range:5 to 35 dBm;(6)operating temperature:-25 to +85.