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TSSS2600

Infrared Emitters 25 Degree 170mW 950nm

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SeekIC No. : 0018889 Detail

TSSS2600: Infrared Emitters 25 Degree 170mW 950nm

TSSS2600 Data Sheet

floor Price/Ceiling Price

US $ .21~.39 / Piece | Get Latest Price
Part Number:
TSSS2600
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.39
  • $.33
  • $.24
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Quick Details

Wavelength : 950 nm Radiant Intensity : 25 mW/sr
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 55 C
Packaging : Bulk    

Description

Beam Angle :
Package / Case :
Packaging : Bulk
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 55 C
Wavelength : 950 nm
Radiant Intensity : 25 mW/sr


Features:

Low forward voltage
Suitable for DC and high pulse current operation
Side view emitter for miniature design
Horizontal angle of half intensity ± 25°
Vertical angle of half intensity ± 60°
Peak wavelength p = 950 nm
High reliability
Good spectral matching to Si photodetectors




Application

Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600)




Specifications

Parameter Test Conditions Symbol Value Unit
Reverse Voltage VR 5 V
Forward Current IF 100 mA
Peak Forward Current tp/T = 0.5, tp = 100 s IFM 200 mA
Surge Forward Current tp = 100 s IFSM 2 A
Power Dissipation PV 170 mW
Junction Temperature Tj 100
Operating Temperature Range Tamb 55...+100
Storage Temperature Range Tstg 55...+100
Soldering Temperature t 5sec, 2 mm from case Tsd 260
Thermal Resistance Junction/Ambient RthJA 450 K/W





Description

TSSS2600 Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs




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