TSSF4500

Beam Angle :
Package / Case :
Minimum Operating Temperature : - 40 C
Packaging : Bulk
Maximum Operating Temperature : + 100 C
Wavelength : 870 nm
Radiant Intensity : 200 mW/sr


Features:

High modulation bandwidth (10 MHz)
Extra high radiant power and high radiant intensity
Low forward voltage
Suitable for high pulse current operation
Angle of half intensity = ± 22°
Peak wavelength _p = 870 nm
High reliability
Good spectral matching to Si photodetectors




Application

Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements.

TSSF4500 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK coded, 450 kHz or 1.3 MHz).




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse Voltage		VR	5	V
Forward Current		IF	100	mA
Peak Forward Current	tp/T = 0.5, tp = 100 s	IFM	200	mA
Surge Forward Current	tp = 100 s	IFSM	1.5	A
Power Dissipation		PV	170	mW
Junction Temperature		Tj	100
Operating Temperature Range		Tamb	40...+100
Storage Temperature Range		Tstg	40...+100
Soldering Temperature	t 5sec, 2 mm from case	Tsd	260
Thermal Resistance Junction/Ambient		RthJA	450	K/W

Description

TSSF4500 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package with spherical side view lens.

The new technology combines the high speed of DH GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.