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TSPF5400

Features: High modulation bandwidth (10 MHz)Extra high radiant power and radiant intensityLow forward voltageStandard T13/4(ø 5 mm) packageAngle of half intensity = ± 24°Peak wavelength p = 870 nmHigh reliabilityGood spectral matching to Si photodetectorsApplicationInfrared high speed remot...

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TSPF5400: Features: High modulation bandwidth (10 MHz)Extra high radiant power and radiant intensityLow forward voltageStandard T13/4(ø 5 mm) packageAngle of half intensity = ± 24°Peak wavelength p = 8...

TSPF5400 Data Sheet

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Part Number:
TSPF5400
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/1

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Product Details

Description



Features:

High modulation bandwidth (10 MHz)
Extra high radiant power and radiant intensity
Low forward voltage
Standard T13/4(ø 5 mm) package
Angle of half intensity = ± 24°
Peak wavelength p = 870 nm
High reliability
Good spectral matching to Si photodetectors


Application

Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements.

TSPF5400 is ideal for the design of transmission systems and for carrier frequency based systems (e.g. ASK / FSK coded, 450 kHz or 1.3 MHz).


Specifications

Parameter Test Conditions Symbol Value Unit
Reverse Voltage   VR 5 V
Forward Current   IF 100 mA
Surge Forward Current tp = 100 s IFSM 200 mA
Power Dissipation   PV 210 mW
Junction Temperature   Tj 100
Operating Temperature Range   Tamb 40...+100
Storage Temperature Range   Tstg 40...+100
Soldering Temperature t 5sec, 2 mm from case Tsd 260
Thermal Resistance Junction/Ambient   RthJA 350 K/W



Description

TSPF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package.

The new technology combines the high speed of DH GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.


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