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TSN10A80

Features: High VDRM & Permissonable di/dtApplicationStater for HID Lump Bullust CircuitSpecifications Rating Symbol Conditions Max. Rated Value Unit Repetitive Peak off-state Voltage VDRM Tj=25°C 800 V Repetitive Peak On-State Current * ITRM Tc 100 °C, VDM 400VIG 80m...

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SeekIC No. : 004529725 Detail

TSN10A80: Features: High VDRM & Permissonable di/dtApplicationStater for HID Lump Bullust CircuitSpecifications Rating Symbol Conditions Max. Rated Value Unit Repetitive Peak off-state Volta...

TSN10A80 Data Sheet

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Part Number:
TSN10A80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

High VDRM & Permissonable di/dt


Application

Stater for HID Lump Bullust Circuit


Specifications

Rating Symbol Conditions Max. Rated Value Unit
Repetitive Peak off-state Voltage
VDRM Tj=25°C 800 V
Repetitive Peak On-State Current * ITRM Tc 100 °C, VDM 400V
IG 80mA, dig/dt 0.5A/s
tw 1.0s, di/dt 1500A/s
duty 0.005		 500 A
Repetitive Peak Forward Current * IFRM Tc 100 °C, tw 1.0s
duty 0.005		 500 A
Critical Rate of Rise of Off-State
Voltage
Permissible Rate of Down of
On-State Current *		 di/dt Tc 100 °C, VDM 400V
IG 80mA, dig/dt 0.5A/s
ITM 500A, tw 1.0s
50Hz, 1min., without Cooling Fin		 1500 A/s
Peak Gate Power PGM f 50Hz, duty 10 5 W
Average Gate Power PG(AV)   0.5 W
Peak Forward Gate Current IGM f 50Hz, duty 10 2 A
Peak Forward Gate Voltage VGM   10 V
Peak Reverse Gate Voltage VRGM   5 V
Operating Junction Temperature Range Tjw   -40 to +125 °C
Storage Temperature Range Tstg   -40 to +150 °C
* notes : Test Circuit & Current Wave Form


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