TSMBJ1006C

Breakover Voltage VBO :
Breakover Current IBO Max :
Holding Current (Ih Max) :
Off-State Capacitance CO :
Non Repetitive On-State Current : 50 A
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Off-State Leakage Current @ VDRM IDRM : 0.005 mA
On-State Voltage : 5 V
Package / Case : DO-214AA
Rated Repetitive Off-State Voltage VDRM : 75 V


Features:

*Oxide-Glass passivated Junction   
*Bi-Directional protection in a single device   
*Surge capabilities up to 100A@10/1000us or 400A@8/20us   
*High Off-State impedance and Low On-State voltage   
*Plastic material has UL flammability classification 94V-0


Specifications

Characteristic	Symbol	Value	Unit
Non-repetitive peak impulse current	R JL	20/W
Non-repetitive peak	R JA	100/W	On recommended pad layout
On-state current
Operating temperature range	VBR/TJ	0.1%/
Junction and storage temperature range