TSMBJ0324C

Breakover Voltage VBO :
Breakover Current IBO Max :
Holding Current (Ih Max) :
Off-State Capacitance CO :
Mounting Style : SMD/SMT
Non Repetitive On-State Current : 20 A
Off-State Leakage Current @ VDRM IDRM : 0.005 mA
On-State Voltage : 5 V
Rated Repetitive Off-State Voltage VDRM : 320 V
Maximum Operating Temperature : + 125 C
Package / Case : DO-214AA


Features:

*Oxide-Glass passivated Junction   
*Bi-Directional protection in a single device   
*Surge capabilities up to 50A@10/1000us or 150A@8/20us   
*High Off-State impedance and Low On-State voltage   
*Plastic material has UL flammability classification 94V-0


Specifications

Characteristic	Symbol	Value	Unit
Non-repetitive peak impulse current	IPP	50A	10/1000us
Non-repetitive peak	ITSM	20A	8.3ms, one-half cycle
On-state current
Operating temperature range	TOP	-40~125
Junction and storage temperature range	TJ, TSTG	-55~150