Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Specially Designed for Li-on Battery Packs Battery Switch ApplicationSpecifications Parameter Symbol Limit Unit Drain-Source VoltageGate-Source VoltageContinuous Drain Current,...
TSM6988D: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Specially Designed for Li-on Battery Packs Battery Switch ApplicationSpecifications ...
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Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction)a,b |
VDS VGS ID IDM IS |
20 ±12 6 30 1.4 |
V V A A A | |
Maximum Power Dissipation | Ta = 25 Ta = 75 |
PD TJ |
1.25 0.8 |
W |
Operating Junction Temperature Operating Junction and Storage Temperature Range |
TJ, TSTG | +150 -55 to +150 |