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TSM6981D

Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PA SwitchSpecifications Parameter Symbol Limit Unit Drain source voltage VDS -20 V Gate source voltage VGS ±8 V Continuous Drain Current, VGS @4.5V. ID ...

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SeekIC No. : 004529700 Detail

TSM6981D: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PA SwitchSpecifications Parameter Symbol Limit Unit Drain source v...

TSM6981D Data Sheet

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Part Number:
TSM6981D
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance


Application

Load Switch
PA Switch


Specifications

Parameter Symbol Limit Unit
Drain source voltage VDS -20 V
Gate source voltage VGS ±8 V
Continuous Drain Current, VGS @4.5V. ID -5 A
A
A
Pulsed Drain Current, VGS @4.5V IDM -30 A
Continuous Source Current (Diode Conduction)a,b IS -1.0 A
Maximum Power Dissipation Ta = 25 PD 1.14 W
Ta = 70 PD 0.73 W
Operating Junction Temperature TJ +150  
Operating and storage temperature range Tj, Tstg -55 to +150
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. Pulse width limited by maximum junction temperature


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