DescriptionFeatures of the TSM6968SDCARV are:(1)advance trench process technology;(2)high density cell design for ultra low on-resistance;(3)ESD protect 2KV. Application of the TSM6968SDCARV are:(1)specially designed for Li-on battery packs;(2)battery switch application. The absolute maximum rat...
TSM6968SDCARV: DescriptionFeatures of the TSM6968SDCARV are:(1)advance trench process technology;(2)high density cell design for ultra low on-resistance;(3)ESD protect 2KV. Application of the TSM6968SDCARV are:(1...
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Features of the TSM6968SDCARV are:(1)advance trench process technology;(2)high density cell design for ultra low on-resistance;(3)ESD protect 2KV.
Application of the TSM6968SDCARV are:(1)specially designed for Li-on battery packs;(2)battery switch application.
The absolute maximum ratings of the TSM6968SDCARV can be summarized as:(1):the parameter is drain-source voltage,the symbol is VDS,the limit is 20,the unit is V;(2):the parameter is gate-source voltage,the symbol is VGS,the limit is ±12,the unit is V;(3):the parameter is continuous drain current,VGS @4.5V,the symbol is ID,the limit is 6.5,the unit is A;(4):the parameter is pulsed drain current,VGS @4.5V,the symbol is IDM,the limit is 30,the unit is A; (5):the parameter is continuous source current (diode conduction),the symbol is IS,the limit is 1.4,the unit is A;(6):the parameter is maximum power dissipation Ta =25,the symbol is PD,the limit is 8.5,the unit is W;(7):the parameter is maximum power dissipation Ta =75,the symbol is PD,the limit is 6.4,the unit is W;(8):the parameter is operating junction temperature,the symbol is TJ,the limit is +150,the unit is ;(9):the parameter is operating junction and Storage temperature range,the symbol is TJ,TSTG,the limit is -55 to +150,the unit is .