TSM55N03CP

MOSFET 25V N channel MOSFET

product image

TSM55N03CP Picture
SeekIC No. : 00155442 Detail

TSM55N03CP: MOSFET 25V N channel MOSFET

floor Price/Ceiling Price

US $ .29~.29 / Piece | Get Latest Price
Part Number:
TSM55N03CP
Mfg:
Taiwan Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~5000
  • Unit Price
  • $.29
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/11

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Packaging : Reel    

Description

Transistor Polarity :
Drain-Source Breakdown Voltage :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Description

The TSM55N03CP is designed as N-channel enhancement mode MOSFET.

TSM55N03CP has five features. (1) Advanced trench process technology. (2) High density cell design for ultra low on-resistance. (3) Improved shoot-through FOM. (4) Fully characterized avalanche voltage and current. (5) Specially designed for DC/DC converters and motor drivers. That are all the main features.

Some TSM55N03CP absolute maximum ratings have been concluded into several points as follow. (1) Its drain-source voltage would be 25V. (2)  Its gate-source voltage would be ±20V. (3) Its continuous drain current would be 55A. (4) Its pulsed drain current would be 350A. (5) Its maximum power dissipation would be 70W at 25°C and would be 42W at 75°C. (6) Its operating junction temperature would be +150°C. (7) Its operating junction and storage temperature range would be from -55°C to +150°C. (8) Its single pulse to source avalanche energy would be 300mJ. (9) Its lead temperature (1/8' from case) would be 10S. (10) Its junction to case thermal resistance would be 1.8°C/W. (11) Its junction to ambient thermal resistance (PCB mounted) would be 40°C/W.

Also some electrical characteristics about TSM55N03CP. (1) Its drain to source breakdown voltage would be min 30V. (2) Its drain to source on-state resistance would be typ 7.5m and max 9.0m with condition of Vgs=4.5V and Id=30A and would be typ 4.5m and max 6.0m with condition of Vgs=10V and Id=30A. (3) Its gate threshold voltage would be min 1.0V and typ 1.6V and max 3.0V. (4) Its zero gate voltage drain current would be max 1.0uA. (5) Its gate body leakage would be max +/-100nA. (6) Its total gate charge would be typ 26nC. (7) Its gate to source charge would be typ 6.0nC. (8) Its gate to drain charge would be typ 5.0nC. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Inductors, Coils, Chokes
Circuit Protection
Optoelectronics
Integrated Circuits (ICs)
View more