MOSFET 25V N channel MOSFET
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Packaging : | Reel |
The TSM55N03CP is designed as N-channel enhancement mode MOSFET.
TSM55N03CP has five features. (1) Advanced trench process technology. (2) High density cell design for ultra low on-resistance. (3) Improved shoot-through FOM. (4) Fully characterized avalanche voltage and current. (5) Specially designed for DC/DC converters and motor drivers. That are all the main features.
Some TSM55N03CP absolute maximum ratings have been concluded into several points as follow. (1) Its drain-source voltage would be 25V. (2) Its gate-source voltage would be ±20V. (3) Its continuous drain current would be 55A. (4) Its pulsed drain current would be 350A. (5) Its maximum power dissipation would be 70W at 25°C and would be 42W at 75°C. (6) Its operating junction temperature would be +150°C. (7) Its operating junction and storage temperature range would be from -55°C to +150°C. (8) Its single pulse to source avalanche energy would be 300mJ. (9) Its lead temperature (1/8' from case) would be 10S. (10) Its junction to case thermal resistance would be 1.8°C/W. (11) Its junction to ambient thermal resistance (PCB mounted) would be 40°C/W.
Also some electrical characteristics about TSM55N03CP. (1) Its drain to source breakdown voltage would be min 30V. (2) Its drain to source on-state resistance would be typ 7.5m and max 9.0m with condition of Vgs=4.5V and Id=30A and would be typ 4.5m and max 6.0m with condition of Vgs=10V and Id=30A. (3) Its gate threshold voltage would be min 1.0V and typ 1.6V and max 3.0V. (4) Its zero gate voltage drain current would be max 1.0uA. (5) Its gate body leakage would be max +/-100nA. (6) Its total gate charge would be typ 26nC. (7) Its gate to source charge would be typ 6.0nC. (8) Its gate to drain charge would be typ 5.0nC. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!