Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID 2 A Pulsed Drai...
TSM3900D: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V ...
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Parameter |
Symbol |
Rating |
Unit | |
Drain-Source Voltage |
VDS |
20 |
V | |
Gate-Source Voltage |
VGS |
±8 |
V | |
Continuous Drain Current |
ID |
2 |
A
| |
Pulsed Drain Current |
IDM |
8 |
A | |
Continuous Source Current (Diode Conduction)a,b |
IS |
1.6 |
A | |
Maximum Power Dissipation | Ta = 25 |
PD |
2.0 |
W |
Ta = 70 |
1.3 | |||
Operating Junction Temperature |
TJ |
+150 |
||
Operating Junction and Storage Temperature Range | TJ, TSTG |
-55 to +150 |