TSL261R-LF

The TSL261R-LF is designed as one kind of IR light-to-voltage optical sensor that combines a photodiode and a transimpedance amplifier (feedback resistor = 16 MW, 8 MW, and 2 MW, respectively) on a single monolithic integrated circuit. also this device is manufactured using advanced linear CMOS silicon-gate technology, which provides good amplifier offset-voltage stability and low power consumption.

Features of the TSL261R-LF are:(1)integral visible light cutoff filter; (2)monolithic silicon IC containing photodiode, operational amplifier, and feedback components; (3)converts light intensity to output voltage; (4)high irradiance responsivity typically 42 mV/(uW/cm2) at lp = 940 nm (TSL260); (5)low dark (offset) voltage: 10 mV max at 25°C, VDD = 5 V; (6)single-supply operation; (7)wide supply voltage range: 3 V to 9 V; (8)low supply current:  800 uA typical at VDD = 5 V; (9)advanced linear CMOS technology.

The absolute maximum ratings of the TSL261R-LF can be summarized as:(1)Supply voltage, VDD: 10 V;(2)Output current, IO: ±10 mA;(3)Duration of short-circuit current at (or below) 25°C: 5 s;(4)Operating free-air temperature range, TA: 25°C to 85°C;(5)Storage temperature range: 25°C to 85°C;(6)Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: 240°C. If you want to know more information about TSL261R-LF, please download the datasheet in www.seekic.com or www.chinaicmart.com .