TSKS5400S

Package / Case :
Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C
Packaging : Bulk
Beam Angle : 30 deg
Wavelength : 950 nm
Radiant Intensity : 4.5 mW/sr


Features:

· Side view package with spherical lens
· Radiation direction perpendicular to mounting direction
· Angle of half sensitivity j = ± 30°
· Peak wavelength lP = 950 nm
· Package compatible to TEKT5400S




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse voltage		VR	6	V
Forward current		IF	100	mA
Surge forward current	tp 100 ms	IFSM	2	A
Power dissipation		PV	170	mW
Junction temperature		Tj	100
Operating temperature range		Tstg	25...+85
Storage temperature range		Tstg	40...+100
Soldering temperature	t 5 s, 2 mm from body	Tsd	260
Thermal resistance junction/ ambient		RthJA	450	K/W

Description

TSKS5400S is a standard GaAs infrared emitting diode in a flat sideview, molded plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile package.

The TSKS5400S  is package compatible to TEKT5400S, phototransistor and to TEKS5400 photodetector, allowing the user to assemble his own optical sensor.