Features: `Extra high radiant power and radiant intensity`Low forward voltage`Suitable for high pulse current operation`Standard T1 3/4 (ø 5 mm) package`Angle of half intensity = ± 17°`Peak wavelength p = 925 nm`High reliability`Good spectral matching to Si photodetectorsApplication·Infrare...
TSIL6400: Features: `Extra high radiant power and radiant intensity`Low forward voltage`Suitable for high pulse current operation`Standard T1 3/4 (ø 5 mm) package`Angle of half intensity = ± 17°`Peak w...
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Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Reverse Voltage |
VR |
5 |
V | |
Forward Current |
IF |
100 |
mA | |
Peak Forward Current |
tp/T=0.5, tp=100s |
IFM |
200 |
mA |
Surge Forward Current |
tp=100s |
IFSM |
1.5 |
A |
Power Dissipation |
PV |
210 |
mW | |
Junction Temperature |
Tj |
100 |
||
Operating Temperature Range |
Tamb |
55...+100 |
||
Storage Temperature Range |
Tstg |
55...+100 |
||
Soldering Temperature |
t 5sec, 2 mm from case |
Tsd |
260 |
|
Thermal Resistance Junction/Ambient |
RthJA |
350 |
K/W |
TSIL6400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve about 70 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore TSIL6400 is ideally suitable as high performance replacements of standard emitters.